Scientists from the Hefei Institute of Physical Science of the Chinese Academy of Sciences have developed a method for controlling potato germination and reducing the concentration of toxic substances in root crops, follows from a publication in the journal ACS Sustainable Chemistry & Engineering.
It is noted that Chinese scientists have tested the use of a nano-compound - silicon dioxide (Nano-SiO2) to control the production of solanine, which is formed during the germination of stored potatoes.
Root crops before loading into storage are immersed in a solution that inhibits the germination of potatoes and the formation of solanine. Silicon dioxide does not pass through the peel and, due to its hydrophobic nature, is easily washed off with water. The solution is thus effective and safe. It is specified that in addition to the new method, one can use temperature conditions, chemical inhibitors, and radiation.
A source: https://fruitnews.ru/